Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage

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In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10(5)), excellent cyclic endurance (>10(3)), and long retention time (>10(4) s), where poly-4-vinylphenol (PVP)/poly(rnelamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving, the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 X 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V), of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next generation electronic applications.
Publisher
AMER CHEMICAL SOC
Issue Date
2017-08
Language
English
Article Type
Article
Keywords

NONVOLATILE MEMORY; THIN-FILMS; ELECTROLYTES; RETENTION; MECHANISM

Citation

ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082

ISSN
1944-8244
DOI
10.1021/acsami.7b07549
URI
http://hdl.handle.net/10203/240746
Appears in Collection
EE-Journal Papers(저널논문)
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