Three Transition Regions Observed in Single Crystalline Bi-Rich Bi2Te3 Nanobelts

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dc.contributor.authorLee, Sunghunko
dc.contributor.authorIn, June-Hoko
dc.contributor.authorJi, Sanghyunko
dc.contributor.authorPark, Yun Changko
dc.contributor.authorKim, Jinheeko
dc.contributor.authorKim, Bongsooko
dc.contributor.authorJung, Myung-Hwako
dc.date.accessioned2018-02-21T06:02:05Z-
dc.date.available2018-02-21T06:02:05Z-
dc.date.created2018-02-12-
dc.date.created2018-02-12-
dc.date.issued2018-05-
dc.identifier.citationSCIENCE OF ADVANCED MATERIALS, v.10, no.5, pp.641 - 646-
dc.identifier.issn1947-2935-
dc.identifier.urihttp://hdl.handle.net/10203/240191-
dc.description.abstractBi2Te3 has recently received considerable attention because of its various characteristics and applications potential. The effort to incorporate dopants into Bi2Te3 to achieve particular features has continued. We investigated Bi-rich Bi2Te3 nanobelts, which were synthesized by the VLS method. We confirmed that single crystalline Bi-rich Bi2Te3 nanobelts with 1:1 of Bi:Te atomic ratio had a hexagonal Bi2Te3 crystal structural phase, using X-ray diffraction and scanning transmission electron microscopy. The results from electrical and magneto-transport measurements of a Bi-rich Bi2Te3 nanodevice revealed three different transition regions, in which different magnetoresistance behaviors were observed, and where the maximum magnetoresistanee ratio was about 105%. These characteristics could provide a wider perspective for potential of Bi-rich Bi2Te3 nanodevices.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectTOPOLOGICAL INSULATOR BI2TE3-
dc.subjectSURFACE-STATES-
dc.subjectPHASE-
dc.subjectNANOWIRES-
dc.titleThree Transition Regions Observed in Single Crystalline Bi-Rich Bi2Te3 Nanobelts-
dc.typeArticle-
dc.identifier.wosid000423632400009-
dc.type.rimsART-
dc.citation.volume10-
dc.citation.issue5-
dc.citation.beginningpage641-
dc.citation.endingpage646-
dc.citation.publicationnameSCIENCE OF ADVANCED MATERIALS-
dc.identifier.doi10.1166/sam.2018.3138-
dc.contributor.localauthorKim, Bongsoo-
dc.contributor.nonIdAuthorJi, Sanghyun-
dc.contributor.nonIdAuthorPark, Yun Chang-
dc.contributor.nonIdAuthorKim, Jinhee-
dc.contributor.nonIdAuthorJung, Myung-Hwa-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorBi-Rich Bi2Te3-
dc.subject.keywordAuthorNanobelts-
dc.subject.keywordAuthorTransition Temperature-
dc.subject.keywordAuthorMagnetoresistance-
dc.subject.keywordPlusTOPOLOGICAL INSULATOR BI2TE3-
dc.subject.keywordPlusSURFACE-STATES-
dc.subject.keywordPlusPHASE-
dc.subject.keywordPlusNANOWIRES-
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