Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

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dc.contributor.authorKim, CKko
dc.contributor.authorMiyamoto, Tko
dc.contributor.authorLee, Yong-Heeko
dc.date.accessioned2011-05-24T09:07:43Z-
dc.date.available2011-05-24T09:07:43Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-11-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.11, pp.5994 - 5996-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/23876-
dc.description.abstractThe influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga0.6In0.4N0.01As0.99 quantum well laser than the higher-N Ga0.75In0.25N0.02As0.98 quantum well laser operating at 1.3 mu m.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherJAPAN J APPLIED PHYSICS-
dc.subjectLASERS-
dc.subjectOPERATION-
dc.subjectSUBSTRATE-
dc.titleDesign considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions-
dc.typeArticle-
dc.identifier.wosid000077648000032-
dc.identifier.scopusid2-s2.0-0032206453-
dc.type.rimsART-
dc.citation.volume37-
dc.citation.issue11-
dc.citation.beginningpage5994-
dc.citation.endingpage5996-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorKim, CK-
dc.contributor.nonIdAuthorMiyamoto, T-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorGaInNAs-
dc.subject.keywordAuthoroptical gains-
dc.subject.keywordAuthorquantum wells-
dc.subject.keywordAuthorsemiconductor lasers-
dc.subject.keywordAuthoroptical fiber communications-
dc.subject.keywordPlusLASERS-
dc.subject.keywordPlusOPERATION-
dc.subject.keywordPlusSUBSTRATE-
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