DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CK | ko |
dc.contributor.author | Miyamoto, T | ko |
dc.contributor.author | Lee, Yong-Hee | ko |
dc.date.accessioned | 2011-05-24T09:07:43Z | - |
dc.date.available | 2011-05-24T09:07:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.11, pp.5994 - 5996 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/23876 | - |
dc.description.abstract | The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga0.6In0.4N0.01As0.99 quantum well laser than the higher-N Ga0.75In0.25N0.02As0.98 quantum well laser operating at 1.3 mu m. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | LASERS | - |
dc.subject | OPERATION | - |
dc.subject | SUBSTRATE | - |
dc.title | Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions | - |
dc.type | Article | - |
dc.identifier.wosid | 000077648000032 | - |
dc.identifier.scopusid | 2-s2.0-0032206453 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 5994 | - |
dc.citation.endingpage | 5996 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Yong-Hee | - |
dc.contributor.nonIdAuthor | Kim, CK | - |
dc.contributor.nonIdAuthor | Miyamoto, T | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GaInNAs | - |
dc.subject.keywordAuthor | optical gains | - |
dc.subject.keywordAuthor | quantum wells | - |
dc.subject.keywordAuthor | semiconductor lasers | - |
dc.subject.keywordAuthor | optical fiber communications | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | SUBSTRATE | - |
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