Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresists therefrom

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Copolymers containing N-vinyllactam derivatives protected at 3-position are provided and represented by the following formula. The copolymers are used as a photoresist material suitable for deep uv process so that high sensitivity and resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in PED stability can be accomplished by use of the photoresist. ##STR1##
Assignee
Hyundai Electronics Industries Co., Ltd.
Country
US (United States)
Issue Date
2000-04-18
Application Date
1997-03-13
Application Number
08816305
Registration Date
2000-04-18
Registration Number
6051678
URI
http://hdl.handle.net/10203/233804
Appears in Collection
CH-Patent(특허)
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