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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

FABRICATION OF INGAAS/INP AVALANCHE PHOTODIODES BY REACTIVE ION ETCHING USING CH4/H-2 GASES

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PARK, CY / YOO, JB / PARK, C / HYUN, KS / OH, DK / Lee, Yong-Hee researcher / LEE, C / PARK, HM

Publisher: AMER INST PHYSICS

Issue Date: 1995

Language: English

Article Type: Article

Keywords: BURIED-HETEROSTRUCTURE LASER; CHEMICAL VAPOR-DEPOSITION; GAIN-BANDWIDTH PRODUCT; INP; HYDROGEN; PHOTODETECTORS; PASSIVATION; ACCEPTORS; METHANE

Citation: JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.13, no.3, pp.974 - 977

ISSN: 1071-1023

URI: http://hdl.handle.net/10203/23223

Appears in Collection: PH-Journal Papers(저널논문)

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