FABRICATION OF INGAAS/INP AVALANCHE PHOTODIODES BY REACTIVE ION ETCHING USING CH4/H-2 GASES

Cited 11 time in webofscience Cited 0 time in scopus
  • Hit : 241
  • Download : 10
Publisher
AMER INST PHYSICS
Issue Date
1995
Language
English
Article Type
Article
Keywords

BURIED-HETEROSTRUCTURE LASER; CHEMICAL VAPOR-DEPOSITION; GAIN-BANDWIDTH PRODUCT; INP; HYDROGEN; PHOTODETECTORS; PASSIVATION; ACCEPTORS; METHANE

Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.13, no.3, pp.974 - 977

ISSN
1071-1023
URI
http://hdl.handle.net/10203/23223
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 11 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0