A semi-empirical CAD model of ferroelectric capacitor for circuit simulation
A semi-empirical CAD model of ferroelectric capacitor for circuit simulation as well as for device characterization is proposed. The model can successfully describe the followings with only 5 parameters(V-c, V-o, P-s, C-o, tau) which have definite meanings. These are 1) hysteresis of charge vs. voltage (Q-V) relationship and capacitance vs. voltage (C-V) relationship, including partial polarization switching by minor voltage sweep. 2) characteristic time dependent polarization reversal(switching) current.
- Publisher
- GORDON BREACH SCI PUBL LTD
- Issue Date
- 1997
- Language
- English
- Article Type
- Article; Proceedings Paper
- Keywords
THIN-FILM MEMORIES; SWITCHING KINETICS
- Citation
INTEGRATED FERROELECTRICS, v.17, no.1-4, pp.97 - 104
- ISSN
- 1058-4587
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
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