Printed Nanolaser on Silicon

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We propose and demonstrate a direct integration of a wavelength-scale III-V nanolaser onto a silicon-on-insulator (SOI) waveguide. By employing high-precision microtransfer printing techniques, with an optimally designed photonic crystal nanolaser structure, we experimentally achieved a coupling efficiency of 83% between the InGaAsP nanobeam laser and the SOI waveguide. Our III-V nanobeam laser is designed as an asymmetric one-dimensional photonic crystal cavity, which allows unidirectional coupling to the combined III-V nanobeam waveguide with high efficiency. Through the compact vertical coupler in the region where the III-V and SOI waveguides overlap at the optimal length of 3.2 mu m, 88% of the light from the printed III-V nanolaser can theoretically be coupled to a vertically integrated SOI waveguide.
Publisher
AMER CHEMICAL SOC
Issue Date
2017-09
Language
English
Article Type
Article
Keywords

QUANTUM-DOT LASERS; ON-CHIP; NANOCAVITY; PHOTONICS

Citation

ACS PHOTONICS, v.4, no.9, pp.2117 - 2123

ISSN
2330-4022
DOI
10.1021/acsphotonics.7b00488
URI
http://hdl.handle.net/10203/226631
Appears in Collection
PH-Journal Papers(저널논문)
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