Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth

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Improvements in the overall efficiency and significant reduction in the efficiency droop are observed in three-dimensional (3D) GaN truncated pyramid structures fabricated with air void and a SiO2 layer. This 3D structure was fabricated using a self-aligned twofold epitaxial lateral overgrowth technique, which improved both the internal quantum efficiency and the light extraction efficiency. In addition, a reduced leakage current was observed due to the effective suppression of threading dislocations. While this study focuses primarily on the blue emission wavelength region, this approach can also be applied to overcome the efficiency degradation problem in the ultraviolet, green, and red emission regions.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2017-08
Language
English
Article Type
Article
Keywords

HIGH-POWER; GROWTH; NANOWIRES; SUBSTRATE; CRYSTAL; ARRAYS; FIELD

Citation

SCIENTIFIC REPORTS, v.7, pp.9663

ISSN
2045-2322
DOI
10.1038/s41598-017-10086-7
URI
http://hdl.handle.net/10203/226005
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
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