Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices

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dc.contributor.authorLim, Seung-Hyukko
dc.contributor.authorSim, Young Chulko
dc.contributor.authorYoo, Yang-Seokko
dc.contributor.authorChoi, Sunghanko
dc.contributor.authorLee, Sangwonko
dc.contributor.authorCho, Yong-Hoonko
dc.date.accessioned2017-09-25T05:12:06Z-
dc.date.available2017-09-25T05:12:06Z-
dc.date.created2017-09-11-
dc.date.created2017-09-11-
dc.date.issued2017-08-
dc.identifier.citationSCIENTIFIC REPORTS, v.7, pp.9356-
dc.identifier.issn2045-2322-
dc.identifier.urihttp://hdl.handle.net/10203/225995-
dc.description.abstractControl of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps which originate from differences in the indium-incorporation efficiency, internal polarization, and growth rate. Here, a-plane {11 (2) over bar0} facets, which are rarely formed in hexagonal pyramid based growth, are intentionally fabricated using mask patterns and adjustment of the core growth conditions. Moreover, the growth area covered by these facets is modified by changing the growth time. The origin of the formation of a-plane {11 (2) over bar0} facets is also discussed. Furthermore, due to a growth condition transition from a 3D core structure to an InGaN multi-quantum well, a growth front transformation (i.e., a transformation of a-plane {11 (2) over bar0} facets to semi-polar {11 (2) over bar2} facets) is directly observed. Based on our understanding and control of this novel growth mechanism, we can achieve efficient broadband LEDs or photovoltaic cells.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectSELECTIVE-AREA GROWTH-
dc.subjectVAPOR-PHASE EPITAXY-
dc.subjectSEMICONDUCTORS-
dc.subjectSUBSTRATE-
dc.subjectPRESSURE-
dc.titleFormation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices-
dc.typeArticle-
dc.identifier.wosid000408441600080-
dc.identifier.scopusid2-s2.0-85028048146-
dc.type.rimsART-
dc.citation.volume7-
dc.citation.beginningpage9356-
dc.citation.publicationnameSCIENTIFIC REPORTS-
dc.identifier.doi10.1038/s41598-017-09782-1-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorLee, Sangwon-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSELECTIVE-AREA GROWTH-
dc.subject.keywordPlusVAPOR-PHASE EPITAXY-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusPRESSURE-

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