DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Byung Chul | ko |
dc.contributor.author | Yang, Sang Yoon | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Kim, Sung Kyu | ko |
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2017-08-08T06:06:10Z | - |
dc.date.available | 2017-08-08T06:06:10Z | - |
dc.date.created | 2017-04-17 | - |
dc.date.created | 2017-04-17 | - |
dc.date.created | 2017-04-17 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.citation | NANO RESEARCH, v.10, no.7, pp.2459 - 2470 | - |
dc.identifier.issn | 1998-0124 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225094 | - |
dc.description.abstract | Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery-powered flexible electronic systems. | - |
dc.language | English | - |
dc.publisher | TSINGHUA UNIV PRESS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | MEMRISTIVE SWITCHES | - |
dc.subject | DEVICES | - |
dc.subject | SUBSTRATE | - |
dc.subject | TRANSPARENT | - |
dc.subject | COMPUTATION | - |
dc.subject | TRANSISTORS | - |
dc.subject | SYSTEMS | - |
dc.subject | DESIGN | - |
dc.subject | FILMS | - |
dc.title | Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics | - |
dc.type | Article | - |
dc.identifier.wosid | 000404396600023 | - |
dc.identifier.scopusid | 2-s2.0-85017410834 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 2459 | - |
dc.citation.endingpage | 2470 | - |
dc.citation.publicationname | NANO RESEARCH | - |
dc.identifier.doi | 10.1007/s12274-017-1449-y | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | memristor | - |
dc.subject.keywordAuthor | memristive logic circuit | - |
dc.subject.keywordAuthor | flexible nonvolatile logic-in-memory circuit | - |
dc.subject.keywordAuthor | normally-off computing | - |
dc.subject.keywordAuthor | memristor-aided logic (MAGIC) architecture | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MEMRISTIVE SWITCHES | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | COMPUTATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | SYSTEMS | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | FILMS | - |
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