DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Kwang-seok | ko |
dc.contributor.author | Gil, J | ko |
dc.contributor.author | Song, Seong-Sik | ko |
dc.contributor.author | Han, Jeong-Hu | ko |
dc.contributor.author | Shin, Hyung-Cheol | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Lee, Kwy-Ro | ko |
dc.date.accessioned | 2011-02-24T01:55:18Z | - |
dc.date.available | 2011-02-24T01:55:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-03 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.40, pp.726 - 735 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/22299 | - |
dc.description.abstract | Taking a velocity saturation effect and a carrier heating effect in the gradual channel region, complete thermal noise modeling of short-channel MOSFETs including the induced gate noise and its correlation coefficients is presented and verified extensively with experimentally measured data. All of the four noise models have excellently predicted experimental data with maximal error less than 10% for the deep-submicron MOSFETs. Using these models and a simultaneous matching technique for both optimal noise and power, a low noise CMOS amplifier optimized for 5.2-GHz operation has been designed and fabricated. Experiments using an external tuner show that both NF50 and NFmin are very close to 1.1 dB, which is an excellent figure of merit among reported LNAs. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DEEP-SUBMICRON MOSFETS | - |
dc.subject | OPTIMIZATION | - |
dc.subject | CMOS | - |
dc.title | Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier | - |
dc.type | Article | - |
dc.identifier.wosid | 000227711600017 | - |
dc.identifier.scopusid | 2-s2.0-16244402353 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.beginningpage | 726 | - |
dc.citation.endingpage | 735 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.identifier.doi | 10.1109/JSSC.2005.843637 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Kwy-Ro | - |
dc.contributor.nonIdAuthor | Han, Kwang-seok | - |
dc.contributor.nonIdAuthor | Gil, J | - |
dc.contributor.nonIdAuthor | Song, Seong-Sik | - |
dc.contributor.nonIdAuthor | Han, Jeong-Hu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | four noise parameters | - |
dc.subject.keywordAuthor | induced gate noise | - |
dc.subject.keywordAuthor | low noise amplifier | - |
dc.subject.keywordAuthor | noise correlation coefficients | - |
dc.subject.keywordAuthor | RF CMOS | - |
dc.subject.keywordAuthor | thermal noise | - |
dc.subject.keywordPlus | DEEP-SUBMICRON MOSFETS | - |
dc.subject.keywordPlus | OPTIMIZATION | - |
dc.subject.keywordPlus | CMOS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.