Ultra-fast erase method of SONOS flash memory by instantaneous thermal excitation = 열적 여기 현상을 이용한 빠른 동작속도의 전하 트랩형 플래시 메모리에 관한 연구

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An ultra-fast erasing process that acts within 200 ns is demonstrated in a junctionless gate-all-around nanowire silicon-oxide?nitride-oxide-silicon (SONOS) device. Rapid erasing is enabled with the use of instantaneous thermal excitation (TE) process through a double-ended gate structure of the fabricated device. Charges inside the charge trap layer comprised of a silicon nitride are de-trapped by Joule heating. Moreover, an in-situ self-annealing effect accompanied by the TE erase method is achieved; hence, both the tunnel oxide quality and the retention characteristics are less degraded compared with the conventional Fowler-Nordheim erase method.
Advisors
Choi, Yang-Kyuresearcher최양규researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2016
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2016.8 ,[iv, 41 p. :]

Keywords

NAND flash memory; SONOS; Gate-all-around; Junctionless transistor; Double-ended gate structure; Joule heat; Fowler-Nordheim erase; Thermal excitation; Self-Annealing; 낸드형 비휘발성 메모리; 전하 저장 기반의 비휘발성 메모리; 다중레벨 셀; 전계 방출 터널링; 줄열; 열적 여기 현상; 자가 어닐링; 자가치유

URI
http://hdl.handle.net/10203/221830
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=663451&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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