DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Hamin | ko |
dc.contributor.author | Kim, Tae-Keun | ko |
dc.contributor.author | Cho, Sung Woo | ko |
dc.contributor.author | Jang, Hong Seok | ko |
dc.contributor.author | Lee, Sang Ick | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2017-02-09T08:21:31Z | - |
dc.date.available | 2017-02-09T08:21:31Z | - |
dc.date.created | 2017-01-06 | - |
dc.date.created | 2017-01-06 | - |
dc.date.created | 2017-01-06 | - |
dc.date.created | 2017-01-06 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.7 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/220435 | - |
dc.description.abstract | Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1: 1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000391385300001 | - |
dc.identifier.scopusid | 2-s2.0-85008618882 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/srep40091 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Kim, Tae-Keun | - |
dc.contributor.nonIdAuthor | Cho, Sung Woo | - |
dc.contributor.nonIdAuthor | Jang, Hong Seok | - |
dc.contributor.nonIdAuthor | Lee, Sang Ick | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GRAPHENE DEVICES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | OXIDE | - |
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