Highly Conducting In2O3 Nanowire Network with Passivating ZrO2 Thin Film for Solution-Processed Field Effect Transistors

Abstract

A hybrid In2O3 nanowire/ZrO2 thin film field effect transistor is demonstrated and the role of insulating ZrO2 thin film is investigated. The ZrO2 film effectively passivates oxygen vacancies at the surface of the conducting In2O3 nanowire network and produces interfacial dipoles, leading to a lower energy barrier for current conduction.