Colossal Terahertz Nonlinearity in Angstrom- and Nanometer-Sized Gaps

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dc.contributor.authorHan, Sanghoonko
dc.contributor.authorKim, Joon-Yeonko
dc.contributor.authorKang, Taeheeko
dc.contributor.authorBahk, Young-Miko
dc.contributor.authorRhie, Jiyeahko
dc.contributor.authorKang, Bong Jooko
dc.contributor.authorKim, Yong Seungko
dc.contributor.authorPark, Joohyunko
dc.contributor.authorKim, Won Taeko
dc.contributor.authorJeon, Hyeongtagko
dc.contributor.authorRoterrnund, Fabianko
dc.contributor.authorKim, Dai-Sikko
dc.date.accessioned2016-12-01T04:58:51Z-
dc.date.available2016-12-01T04:58:51Z-
dc.date.created2016-11-21-
dc.date.created2016-11-21-
dc.date.issued2016-08-
dc.identifier.citationACS PHOTONICS, v.3, no.8, pp.1440 - 1445-
dc.identifier.issn2330-4022-
dc.identifier.urihttp://hdl.handle.net/10203/214482-
dc.description.abstractWe investigated optical nonlinearity induced by electron tunneling through an insulating vertical gap between metals, both at terahertz frequency and at near-infrared frequency. We adopted graphene and alumina layers as gap materials to form gap widths of 3 angstrom and 1.5 nm, respectively. Transmission measurements show that tunneling-induced transmittance changes from strong fields at the gaps can be observed with relatively weak incident fields at terahertz frequency due to high field enhancement, whereas nonlinearity at the near-infrared frequency is restricted by laser-induced metal damages. Even when the same level of tunneling currents occurs at both frequencies, transmittance in the terahertz regime decreases much faster than that in the near-infrared regime. An equivalent circuit model regarding the tunneling as a resistance component reveals that strong terahertz nonlinearity is due to much smaller displacement currents relative to tunneling currents, also explaining small nonlinearity of the near-infrared regime with orders of magnitude larger displacement currents.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectFIELD ENHANCEMENT-
dc.subjectQUANTUM PLASMONICS-
dc.subjectTUNNELING TIME-
dc.subjectELECTRON-
dc.subjectHETEROSTRUCTURE-
dc.subjectNANOSTRUCTURES-
dc.subjectPHOTOEMISSION-
dc.subjectRESONANCES-
dc.subjectGENERATION-
dc.subjectGRAPHENE-
dc.titleColossal Terahertz Nonlinearity in Angstrom- and Nanometer-Sized Gaps-
dc.typeArticle-
dc.identifier.wosid000381717600011-
dc.identifier.scopusid2-s2.0-84983413178-
dc.type.rimsART-
dc.citation.volume3-
dc.citation.issue8-
dc.citation.beginningpage1440-
dc.citation.endingpage1445-
dc.citation.publicationnameACS PHOTONICS-
dc.identifier.doi10.1021/acsphotonics.6b00103-
dc.contributor.localauthorRoterrnund, Fabian-
dc.contributor.nonIdAuthorHan, Sanghoon-
dc.contributor.nonIdAuthorKim, Joon-Yeon-
dc.contributor.nonIdAuthorKang, Taehee-
dc.contributor.nonIdAuthorBahk, Young-Mi-
dc.contributor.nonIdAuthorRhie, Jiyeah-
dc.contributor.nonIdAuthorKang, Bong Joo-
dc.contributor.nonIdAuthorKim, Yong Seung-
dc.contributor.nonIdAuthorPark, Joohyun-
dc.contributor.nonIdAuthorKim, Won Tae-
dc.contributor.nonIdAuthorJeon, Hyeongtag-
dc.contributor.nonIdAuthorKim, Dai-Sik-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorterahertz nonlinearity-
dc.subject.keywordAuthorquantum tunneling-
dc.subject.keywordAuthorangstrom gap-
dc.subject.keywordAuthormetal-insulator-metal-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthoraluminum oxide-
dc.subject.keywordPlusFIELD ENHANCEMENT-
dc.subject.keywordPlusQUANTUM PLASMONICS-
dc.subject.keywordPlusTUNNELING TIME-
dc.subject.keywordPlusELECTRON-
dc.subject.keywordPlusHETEROSTRUCTURE-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusPHOTOEMISSION-
dc.subject.keywordPlusRESONANCES-
dc.subject.keywordPlusGENERATION-
dc.subject.keywordPlusGRAPHENE-
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