Control of magnetic domain-wall polarization by means of angled Oersted field writing

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dc.contributor.authorKim, Kab-Jinko
dc.contributor.authorMoon, Kyoung-Woongko
dc.contributor.authorLee, Kang-Sooko
dc.contributor.authorChoe, Sug-Bongko
dc.date.accessioned2016-11-09T08:30:26Z-
dc.date.available2016-11-09T08:30:26Z-
dc.date.created2016-11-02-
dc.date.created2016-11-02-
dc.date.issued2011-01-
dc.identifier.citationNANOTECHNOLOGY, v.22, no.2-
dc.identifier.issn0957-4484-
dc.identifier.urihttp://hdl.handle.net/10203/214021-
dc.description.abstractWe propose a method to control the polarization of the magnetic domain walls (DWs) in ferromagnetic nanowires. Two neighboring DWs with antiparallel polarization alignment rather than parallel alignment are found to exhibit better stability with a helical magnetic structure that can be hardly be detangled. To achieve such an antiparallel alignment, two co-planar current lines with an angle to the nanowire are designed, from which the Oersted field creates a domain in between the current lines while keeping the polarization of the DWs beneath the current lines, as confirmed by a micromagnetic calculation for ferromagnetic nanowires with perpendicular magnetic anisotropy-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectNANOWIRES-
dc.subjectNOTCHES-
dc.titleControl of magnetic domain-wall polarization by means of angled Oersted field writing-
dc.typeArticle-
dc.identifier.wosid000285093500016-
dc.identifier.scopusid2-s2.0-79251577705-
dc.type.rimsART-
dc.citation.volume22-
dc.citation.issue2-
dc.citation.publicationnameNANOTECHNOLOGY-
dc.identifier.doi10.1088/0957-4484/22/2/025702-
dc.contributor.localauthorKim, Kab-Jin-
dc.contributor.nonIdAuthorMoon, Kyoung-Woong-
dc.contributor.nonIdAuthorLee, Kang-Soo-
dc.contributor.nonIdAuthorChoe, Sug-Bong-
dc.type.journalArticleArticle-
dc.subject.keywordPlusNANOWIRES-
dc.subject.keywordPlusNOTCHES-
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