Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na3Bi

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We report a molecular beam epitaxial growth of Na3Bi single-crystal thin films on two different substrates-epitaxial bilayer graphene terminated 6H-SiC(0001) and Si(111). Using reflection high-energy electron diffraction, we found that the lattice orientation of the grown Na3Bi thin film was rotated by 30 degrees respect to the surface lattice orientations of these two substrates. An in-situ angle-resolved photoemission spectroscopy clearly revealed the 3-dimensional Dirac-cone band structure in such thin films. Our approach of growing Na3Bi thin film provides a potential route for further studying its intriguing electronic properties and for fabricating it into practical devices in future. (C) 2014 AIP Publishing LLC
Publisher
AMER INST PHYSICS
Issue Date
2014-07
Language
English
Article Type
Article
Keywords

GRAPHENE

Citation

APPLIED PHYSICS LETTERS, v.105, no.3

ISSN
0003-6951
DOI
10.1063/1.4890940
URI
http://hdl.handle.net/10203/212598
Appears in Collection
NT-Journal Papers(저널논문)
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