Photoluminescence study of high energy proton irradiation on Cu(In,Ga)Se-2 thin films

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We have studied the effect of proton irradiation on Cu(In,Ga)Se-2 (CIGS) thin films using photoluminescence (PL). We used a 10 MeV proton beam with varying doses from 10(9) to 10(12) cm(-2). Intensity-dependent low temperature PL measurements suggest that the proton irradiation does not create a new defect level but instead changes the number of preexisting defects in the detection range of the PL system. By comparing PL spectra after the proton irradiation with those obtained after thermal annealing under inert gas aswell as under hydrogen gas ambient, we find that the irradiation-induced change in the defect structure does not originate from the incorporation of hydrogen but fromenergetics of the irradiating particles. Electrical resistivity of the proton irradiated CIGS thin films is shown to decrease after the proton irradiation, and this is explained by the reduction of the concentration of compensating donor-like defects, specifically selenium vacancies, based on the PL results. (C) 2016 Elsevier B.V. All rights reserved
Publisher
ELSEVIER SCIENCE SA
Issue Date
2016-03
Language
English
Article Type
Article
Keywords

SOLAR-CELLS; ELECTRON-IRRADIATION

Citation

THIN SOLID FILMS, v.603, no.1, pp.134 - 138

ISSN
0040-6090
DOI
10.1016/j.tsf.2016.01.050
URI
http://hdl.handle.net/10203/208777
Appears in Collection
MS-Journal Papers(저널논문)
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