Large-Area Assembly of Densely Aligned Single-Walled Carbon Nanotubes Using Solution Shearing and Their Application to Field-Effect Transistors

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Dense alignment of single-walled carbon nanotubes over a large area is demonstrated using a novel solution-shearing technique. A density of 150-200 single-walled carbon nanotubes per micrometer is achieved with a current density of 10.08 μA μm-1 at VDS = -1 V. The on-current density is improved by a factor of 45 over that of random-network single-walled carbon nanotubes
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2015-04
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; LARGE-SCALE; SELECTIVE DISPERSION; ARRAYS; NETWORKS; PERFORMANCE; CONTACT; DENSITY; ELECTRONICS; DIELECTRICS

Citation

ADVANCED MATERIALS, v.27, no.16, pp.2656 - 2662

ISSN
0935-9648
DOI
10.1002/adma.201405289
URI
http://hdl.handle.net/10203/207314
Appears in Collection
MS-Journal Papers(저널논문)
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