Effect of carrier diffusion in oxidized vertical-cavity surface-emitting lasers determined from lateral spontaneous emission

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The effect of carrier diffusion on threshold current is studied quantitatively for the oxide-aperturbed 780 nm vertical-cavity surface-emitting lasers (VCSEL) from the measured spontaneous emission, The oxide aperture size of 2-10 mu m is prepared and characterized, The diffusion coefficient of 4.6 cm(2)/s and the nonradiative recombination coefficient of 6.8x10(7)/s are obtained using the independence of the nonradiative recombination coefficient on the laser aperture size, The contribution of carrier diffusion loss is 42% of the threshold current for the 2 mu m VCSEL, The relative contribution of the diffusion becomes smaller for the larger devices as is expected. (C) 1997 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1997-05
Language
English
Article Type
Article
Keywords

HETEROSTRUCTURE LASERS; WAVE-GUIDE; RECOMBINATION; LOSSES

Citation

APPLIED PHYSICS LETTERS, v.70, no.20, pp.2652 - 2654

ISSN
0003-6951
URI
http://hdl.handle.net/10203/20428
Appears in Collection
PH-Journal Papers(저널논문)
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