Microstructural and electrical properties of lead-free 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) epitaxial films grown on Si (001) substrates

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dc.contributor.authorChoi, Min-Juko
dc.contributor.authorLim, Jae-Ryungko
dc.contributor.authorChoi, Jin-Suckko
dc.contributor.authorEom, Ji-Hoko
dc.contributor.authorPark, Byung-Juko
dc.contributor.authorKim, Kyung-Sooko
dc.contributor.authorKim, Dojinko
dc.contributor.authorYoon, Soon-Gilko
dc.date.accessioned2016-04-15T02:56:42Z-
dc.date.available2016-04-15T02:56:42Z-
dc.date.created2015-09-21-
dc.date.created2015-09-21-
dc.date.issued2015-11-
dc.identifier.citationSCRIPTA MATERIALIA, v.108, pp.96 - 99-
dc.identifier.issn1359-6462-
dc.identifier.urihttp://hdl.handle.net/10203/203846-
dc.description.abstractLead-free 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (BZT BCT) and the La0.5Sr0.5CoO3 (LSCO) bottom electrode films were epitaxially grown onto the CeO2/Y0.15Zr0.85O1.93 (YSZ) buffered Si (001) substrates via pulsed laser deposition. The lattice alignments between CeO2/YSZ and BZT BCTILSCO showed a 450 twisted cube-on-cube epitaxial relationship, indicating a high crystallinity of the BZT BCT and LSCO films. The constituent elements in the BZT BCT/LSCO/CeO2/YSZ structure showed no distinct inter-diffusion between each layer. The BZT BCT epitaxial films showed a well saturation of the polarization electric field (P-E).-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectPZT THIN-FILMS-
dc.subjectPIEZOELECTRIC COEFFICIENT-
dc.subjectD(31)-
dc.titleMicrostructural and electrical properties of lead-free 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (BZT-BCT) epitaxial films grown on Si (001) substrates-
dc.typeArticle-
dc.identifier.wosid000360250700024-
dc.identifier.scopusid2-s2.0-84939773318-
dc.type.rimsART-
dc.citation.volume108-
dc.citation.beginningpage96-
dc.citation.endingpage99-
dc.citation.publicationnameSCRIPTA MATERIALIA-
dc.identifier.doi10.1016/j.scriptamat.2015.06.026-
dc.contributor.nonIdAuthorChoi, Min-Ju-
dc.contributor.nonIdAuthorLim, Jae-Ryung-
dc.contributor.nonIdAuthorEom, Ji-Ho-
dc.contributor.nonIdAuthorPark, Byung-Ju-
dc.contributor.nonIdAuthorKim, Kyung-Soo-
dc.contributor.nonIdAuthorKim, Dojin-
dc.contributor.nonIdAuthorYoon, Soon-Gil-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorLead-free BZT-BCT epitaxial films-
dc.subject.keywordAuthorCeO2/YSZ buffered Si (001) substrate-
dc.subject.keywordAuthorPulsed laser deposition-
dc.subject.keywordAuthorCrystallinity-
dc.subject.keywordAuthorElectrical property-
dc.subject.keywordPlusPZT THIN-FILMS-
dc.subject.keywordPlusPIEZOELECTRIC COEFFICIENT-
dc.subject.keywordPlusD(31)-
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