1.1 mW single-mode output power of all-monolithic 1.3 mu m InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition

Abstract

We present all-monolithic InAlGaAs/InP vertical cavity surface emitting lasers (VCSELs) emitting wavelength of 1.3 mu m grown by metal organic chemical vapor deposition (MOCVD). The devices with tunnel junction (TJ) and the air-gap aperture showed the performances as high as output power of 1.1 mW and as low as threshold current of 1.9 mA operating in singlemode at room temperature. We obtained the emitting transverse wavelength of 1333.1 nm with side mode suppression ratio (SMSR) of 40dB, the continuous wave (CW) operation of temperature over 80 degrees C, and modulation bandwidth exceeding 2.5Gbit/s.