DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Dong Hyeop | ko |
dc.contributor.author | KIM, TAEGEON | ko |
dc.contributor.author | Ahn, Byung-Tae | ko |
dc.contributor.author | Han, Seung Min J. | ko |
dc.date.accessioned | 2015-06-29T04:51:29Z | - |
dc.date.available | 2015-06-29T04:51:29Z | - |
dc.date.created | 2015-06-26 | - |
dc.date.created | 2015-06-26 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.7, no.24, pp.13557 - 13563 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/199520 | - |
dc.description.abstract | To reduce the cost of the Cu(In,Ga)Se-2 (CIGS) solar cells while maximizing the efficiency, we report the use of an Ag nanowires (NWs) + poly(3,4-thylenedioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) hybrid transparent electrode, which was deposited using all-solution-processed, low-cost, scalable methods. This is the first demonstration of an Ag NWs + PEDOT: PSS transparent electrode applied to CIGS solar cells. The spin-coated 10-nm-thick PEDOT: PSS conducting polymer layer in our hybrid electrode functioned as a filler of empty space of an electrostatically sprayed Ag NW network. Coating of PEDOT: PSS on the Ag NW network resulted in an increase in the short-circuit current from 15.4 to 26.5 mA/cm(2), but the open-circuit voltage and shunt resistance still needed to be improved. The limited open-circuit voltage was found to be due to interfacial recombination that is due to the ineffective hole-blocking ability of the CdS film. To suppress the interfacial recombination between Ag NWs and the CdS film, a Zn(S,O,OH) film was introduced as a hole-blocking layer between the CdS film and Ag NW network. The open-circuit voltage of the cell sharply improved from 0.35 to 0.6 V, which resulted in the best cell efficiency of 11.6%. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SILVER NANOWIRES | - |
dc.subject | COMPOSITE ELECTRODES | - |
dc.subject | SURFACE MODIFICATION | - |
dc.subject | TRANSPARENT | - |
dc.subject | EFFICIENCY | - |
dc.subject | BUFFER | - |
dc.subject | LAYER | - |
dc.subject | DEPOSITION | - |
dc.subject | INTERFACE | - |
dc.subject | DEVICES | - |
dc.title | Solution-Processed Ag Nanowires plus PEDOT:PSS Hybrid Electrode for Cu(ln,Ga)Se-2 Thin-Film Solar Cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000357063200052 | - |
dc.identifier.scopusid | 2-s2.0-84932599409 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 24 | - |
dc.citation.beginningpage | 13557 | - |
dc.citation.endingpage | 13563 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.5b02989 | - |
dc.contributor.localauthor | Ahn, Byung-Tae | - |
dc.contributor.localauthor | Han, Seung Min J. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ag nanowire | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | Ag nanowires plus PEDOT:PSS hybrid transparent electrode | - |
dc.subject.keywordAuthor | Zn(S,O,OH) | - |
dc.subject.keywordAuthor | hole-blocking layer | - |
dc.subject.keywordAuthor | Cu(In,Ga)Se-2 solar cell | - |
dc.subject.keywordPlus | SILVER NANOWIRES | - |
dc.subject.keywordPlus | COMPOSITE ELECTRODES | - |
dc.subject.keywordPlus | SURFACE MODIFICATION | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | BUFFER | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | DEVICES | - |
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