Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 201
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLee, Seung Ryulko
dc.contributor.authorAhn, Byung-Taeko
dc.contributor.authorKang, Bo Sooko
dc.date.accessioned2015-06-04T05:40:13Z-
dc.date.available2015-06-04T05:40:13Z-
dc.date.created2015-06-01-
dc.date.created2015-06-01-
dc.date.issued2015-06-
dc.identifier.citationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.119, no.4, pp.1437 - 1441-
dc.identifier.issn0947-8396-
dc.identifier.urihttp://hdl.handle.net/10203/198772-
dc.description.abstractA uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoN (x) interlayer followed by an in situ annealing process. The amorphous Si-N layer which is formed at the CoN (x) /Si interface plays a role in inhibiting excessive Co incorporation into Si layer and consequently enhancing the epitaxial growth of CoSi2 layer. However, the Si-N layer also limits the growth of thick CoSi2 layer. Therefore, the thickness of the amorphous Si-N layer is an important factor for the epitaxial growth of the CoSi2 layer with uniform structure and low sheet resistance.-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectOXIDE-MEDIATED EPITAXY-
dc.subjectREACTIVE DEPOSITION-
dc.subjectSI(100) SUBSTRATE-
dc.subjectSILICON-
dc.subjectCOBALT-
dc.subjectSILICIDATION-
dc.subjectSTABILITY-
dc.subjectSI(001)-
dc.subjectLAYER-
dc.titleEffects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD-
dc.typeArticle-
dc.identifier.wosid000354187100030-
dc.identifier.scopusid2-s2.0-84937762004-
dc.type.rimsART-
dc.citation.volume119-
dc.citation.issue4-
dc.citation.beginningpage1437-
dc.citation.endingpage1441-
dc.citation.publicationnameAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.identifier.doi10.1007/s00339-015-9117-0-
dc.contributor.localauthorAhn, Byung-Tae-
dc.contributor.nonIdAuthorLee, Seung Ryul-
dc.contributor.nonIdAuthorKang, Bo Soo-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusOXIDE-MEDIATED EPITAXY-
dc.subject.keywordPlusREACTIVE DEPOSITION-
dc.subject.keywordPlusSI(100) SUBSTRATE-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusCOBALT-
dc.subject.keywordPlusSILICIDATION-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusSI(001)-
dc.subject.keywordPlusLAYER-
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0