Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD

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A uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoN (x) interlayer followed by an in situ annealing process. The amorphous Si-N layer which is formed at the CoN (x) /Si interface plays a role in inhibiting excessive Co incorporation into Si layer and consequently enhancing the epitaxial growth of CoSi2 layer. However, the Si-N layer also limits the growth of thick CoSi2 layer. Therefore, the thickness of the amorphous Si-N layer is an important factor for the epitaxial growth of the CoSi2 layer with uniform structure and low sheet resistance.
Publisher
SPRINGER
Issue Date
2015-06
Language
English
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; OXIDE-MEDIATED EPITAXY; REACTIVE DEPOSITION; SI(100) SUBSTRATE; SILICON; COBALT; SILICIDATION; STABILITY; SI(001); LAYER

Citation

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.119, no.4, pp.1437 - 1441

ISSN
0947-8396
DOI
10.1007/s00339-015-9117-0
URI
http://hdl.handle.net/10203/198772
Appears in Collection
MS-Journal Papers(저널논문)
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