Study on low-outgassing resists = 저가스 발생형 레지스트에 대한 연구

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 401
  • Download : 0
In photolithography, air bubbles on the surface of a photoresist have been found to produce defects characterized by significant underexposure and geometry-dependent pattern distortion. The polymers with tertiary butyl groups, widely used for chemically amplified photoresists, release the volatile byproduct, isobutene, by acid-catalyzed deprotection reaction and produced air bubbles. A novel monomer for low-outgassing resist was synthesized. Tertiary caprolactone group was synthesized from camphor by Baeyer-Villiger oxidation. Tertiary caprolactone group was cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposure region after post-exposure bake. This group do not produce volatile byproducts during the deprotection reaction.
Advisors
Kim, Jin-Baekresearcher김진백
Description
한국과학기술원 : 화학과,
Publisher
한국과학기술원
Issue Date
2014
Identifier
592513/325007  / 020118140
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 화학과, 2014.8, [ v, 29 p. ]

Keywords

photolithography; 단량체; 가스발생; 레지스트; 리소그래피; monomer; photoresist; outgassing

URI
http://hdl.handle.net/10203/196434
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=592513&flag=dissertation
Appears in Collection
CH-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0