Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer

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We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al2O3 onto exfoliated molybdenum disulfide (MoS2) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS2 by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al2O3. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al2O3/MoS2 interface, but also leaves MoS2 intact.
Publisher
AMER INST PHYSICS
Issue Date
2015-01
Language
English
Article Type
Article
Keywords

HIGH-K DIELECTRICS; DICHALCOGENIDE NANOSHEETS; 2-DIMENSIONAL CRYSTALS; HIGH-PERFORMANCE; MULTILAYER MOS2; SURFACE-ENERGY; MONOLAYER MOS2; TRANSISTORS; DEPOSITION; GRAPHENE

Citation

APPLIED PHYSICS LETTERS, v.106, no.2

ISSN
0003-6951
DOI
10.1063/1.4905634
URI
http://hdl.handle.net/10203/195625
Appears in Collection
RIMS Journal Papers
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