GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer

Abstract

Using burial wet-oxidised AlxOy layers to enhance impurity free vacancy diffusion. the intermixing of GaAs/AlGaAs quantum wells has been achieved A 70 Angstrom thick GaAs quantum well shows a blueshift of 59meV when the sample is annealed at 950 degrees C for 120s. By cathodeluminescence measurements. it is confirmed that the bandgap transition region is localised laterally within 1 mu m of the oxide/nonoxide interface.