GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer

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Using burial wet-oxidised AlxOy layers to enhance impurity free vacancy diffusion. the intermixing of GaAs/AlGaAs quantum wells has been achieved A 70 Angstrom thick GaAs quantum well shows a blueshift of 59meV when the sample is annealed at 950 degrees C for 120s. By cathodeluminescence measurements. it is confirmed that the bandgap transition region is localised laterally within 1 mu m of the oxide/nonoxide interface.
Publisher
IEE-INST ELEC ENG
Issue Date
2000-02
Language
English
Article Type
Article
Keywords

DIFFUSION

Citation

ELECTRONICS LETTERS, v.36, no.3, pp.246 - 247

ISSN
0013-5194
URI
http://hdl.handle.net/10203/19437
Appears in Collection
PH-Journal Papers(저널논문)
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