Auto-Scaling Overdrive Method Using Adaptive Charge Amplification for PRAM Write Performance Enhancement

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A PRAM write driver with an auto-scaling overdrive method is presented. The proposed overdrive method significantly reduces the rise time of the cell-current pulse for bit-line parasitic components of 3 pF and 6 k Omega, and it lowers the complexity of the overdrive control using an adaptive charge amplification technique. A rise time of less than 15 ns is achieved and shortened up to 4.7 times, and the total write-throughput is increased. The rise time is reduced consistently for all levels of the target-current by the auto-scaling effect. Therefore, cell heating control becomes more linear in program-and-verify (PNV) operation. Due to its simple adding-on structure, it is easily compatible with a conventional write driver. A prototype chip was implemented using a 0.18-mu m CMOS process. It is also applicable to smaller-scale technology.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-11
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.61, no.11, pp.3165 - 3174

ISSN
1549-8328
DOI
10.1109/TCSI.2014.2334813
URI
http://hdl.handle.net/10203/193811
Appears in Collection
EE-Journal Papers(저널논문)
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