A printed nanobeam laser on a SiO2/Si substrate for low-threshold continuous-wave operation

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A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of similar to 6.6 x 0.58 x 0.28 mu m(3) (similar to 10.5 (lambda/n)(3)) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 mu W. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.
Publisher
OPTICAL SOC AMER
Issue Date
2014-05
Language
English
Article Type
Article
Keywords

PHOTONIC CRYSTAL LASERS; ULTRALOW-THRESHOLD; SILICON-WAFER; NANOCAVITY; NANOLASER

Citation

OPTICS EXPRESS, v.22, no.10, pp.12115 - 12121

ISSN
1094-4087
DOI
10.1364/OE.22.012115
URI
http://hdl.handle.net/10203/189294
Appears in Collection
ME-Journal Papers(저널논문)PH-Journal Papers(저널논문)
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