0.7-2.7 GHz wideband CMOS low-noise amplifier for LTE application

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dc.contributor.authorHidayov, O. A.ko
dc.contributor.authorNam, N. H.ko
dc.contributor.authorYoon, Giwanko
dc.contributor.authorHan, S. K.ko
dc.contributor.authorLee, Sang-Gugko
dc.date.accessioned2014-08-27T02:27:46Z-
dc.date.available2014-08-27T02:27:46Z-
dc.date.created2013-11-20-
dc.date.created2013-11-20-
dc.date.issued2013-11-
dc.identifier.citationELECTRONICS LETTERS, v.49, no.23, pp.1433 - 1435-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/187364-
dc.description.abstractA wideband low-noise amplifier (LNA) for long-term evolution applications is presented. A capacitive cross-coupled common-gate in combination with current-bleeding common-source topologies is adopted for wideband input matching, high gain and low noise figure (NF). Inter-cascade inductors are adopted to cancel the inter-stage parasitics, which extend input matching and operational bandwidth to higher frequency with additional NF reduction. Implemented in a 0.18 mu m CMOS technology, the proposed wideband LNA shows a voltage gain of 17 dB, a NF of <2.5 dB, vertical bar S-11 vertical bar of higher than 10 dB and a maximum IIP3 of + 1.52 dBm over the frequency range of 0.7-2.7 GHz while consuming 7.5 mA from a 1.8 V supply.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.subjectLNA-
dc.title0.7-2.7 GHz wideband CMOS low-noise amplifier for LTE application-
dc.typeArticle-
dc.identifier.wosid000327302500015-
dc.identifier.scopusid2-s2.0-84889073539-
dc.type.rimsART-
dc.citation.volume49-
dc.citation.issue23-
dc.citation.beginningpage1433-
dc.citation.endingpage1435-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2013.3103-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYoon, Giwan-
dc.contributor.localauthorLee, Sang-Gug-
dc.contributor.nonIdAuthorHidayov, O. A.-
dc.contributor.nonIdAuthorNam, N. H.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLNA-
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