A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation

Abstract

We report the performances of a planar-type Geiger-mode InGaAs/InP avalanche photodiode (APD) using a single-diffusion process based on a single wet recess-etching technique at a wavelength of 1.55 mu m. The recess-etched window region is found to have a smoothly etched sidewall with a large slope width of 0.9 mu m. The Geiger-mode characteristics have been measured at 240-280 K for a 20 mu m diameter device. The fabricated Geiger-mode APD shows a low dark count probability (DCP) per gate pulse of 2.8 x 10(-3), a high photon detection efficiency (PDE) of 17.4%, and a low noise equivalent power (NEP) of 1.74 x 10(-16) W/Hz(1/2) at 240 K. The results are the first demonstration of a planar-type single-diffused Geiger-mode APD using a single wet recess-etching. (C) 2013 The Japan Society of Applied Physics