Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

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dc.contributor.authorHwang, Wan Sikko
dc.contributor.authorRemskar, Majako
dc.contributor.authorYan, Rusenko
dc.contributor.authorKosel, Tomko
dc.contributor.authorPark, Jong Kyungko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorHaensch, Wilfriedko
dc.contributor.authorXing, Huili (Grace)ko
dc.contributor.authorSeabaugh, Alanko
dc.contributor.authorJena, Debdeepko
dc.date.accessioned2013-08-08T05:46:03Z-
dc.date.available2013-08-08T05:46:03Z-
dc.date.created2013-03-19-
dc.date.created2013-03-19-
dc.date.issued2013-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.102, no.4-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/174601-
dc.description.abstractWe report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789975]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectATOMIC LAYERS-
dc.subjectHIGH-MOBILITY-
dc.subjectGRAPHENE-
dc.subjectGROWTH-
dc.titleComparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors-
dc.typeArticle-
dc.identifier.wosid000314723600084-
dc.identifier.scopusid2-s2.0-84873594478-
dc.type.rimsART-
dc.citation.volume102-
dc.citation.issue4-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.4789975-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorHwang, Wan Sik-
dc.contributor.nonIdAuthorRemskar, Maja-
dc.contributor.nonIdAuthorYan, Rusen-
dc.contributor.nonIdAuthorKosel, Tom-
dc.contributor.nonIdAuthorPark, Jong Kyung-
dc.contributor.nonIdAuthorHaensch, Wilfried-
dc.contributor.nonIdAuthorXing, Huili (Grace)-
dc.contributor.nonIdAuthorSeabaugh, Alan-
dc.contributor.nonIdAuthorJena, Debdeep-
dc.type.journalArticleArticle-
dc.subject.keywordPlusATOMIC LAYERS-
dc.subject.keywordPlusHIGH-MOBILITY-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusGROWTH-
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