Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates

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This study investigates optical properties and carrier dynamics of InGaN-based light-emitting diodes grown on cone-shaped patterned sapphire (CSPS) and planar sapphire substrates. Edge-type threading dislocations were dramatically reduced in InGaN multiple quantum wells (MQWs) on CSPS substrates compared to the case of planar substrates. We observed a smaller Stokes shift and enhanced quantum efficiency for CSPS substrates. From time-resolved optical analysis, we found that the non-radiative (radiative) recombination rate of MQWs on CSPS is lower (higher) than that of MQWs on planar substrates, which is consistent with improved crystal quality (strain relaxation) of the MQWs on CSPS. (C) 2013 AIP Publishing LLC.
Publisher
AMER INST PHYSICS
Issue Date
2013-05
Language
English
Article Type
Article
Citation

JOURNAL OF APPLIED PHYSICS, v.113, no.17, pp.173512-1 - 173512-5

ISSN
0021-8979
DOI
10.1063/1.4803515
URI
http://hdl.handle.net/10203/174051
Appears in Collection
PH-Journal Papers(저널논문)
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