Studies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation

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dc.contributor.authorSridharan, Mko
dc.contributor.authorNarayandass, SKko
dc.contributor.authorMangalaraj, Dko
dc.contributor.authorLee, Hee Chulko
dc.date.accessioned2009-12-14T06:26:29Z-
dc.date.available2009-12-14T06:26:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-04-
dc.identifier.citationVACUUM, v.70, pp.511 - 522-
dc.identifier.issn0042-207X-
dc.identifier.urihttp://hdl.handle.net/10203/14810-
dc.description.abstractPolycrystalline Cd0.96Zn0.04Te thin films are deposited onto glass substrates (Corning 7059) kept at room temperature by vacuum evaporation. The films exhibit zinc blende structure with predominant (111) orientation. The rms roughness of the films evaluated by atomic force microscope is 3.7 nm. The band gap energy of the films measured by optical transmittance measurement is 1.539eV. The photoluminescence (PL) spectrum of the films shows intense emission due to free and bound exciton recombination and no emission associated with crystal imperfection and PL line shapes give indications of the high quality of the layers. These films have been implanted with properly mass analyzed Boron ions (B-10(+)) and the effect of implantation has been analyzed by X-ray diffraction, Raman scattering and optical transmittance measurements and the results are explained on the basis of the implantation induced surface roughness and lattice disorder. (C) 2003 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectION-IMPLANTATION DAMAGE-
dc.subjectRAMAN-SCATTERING-
dc.subjectOPTICAL-ABSORPTION-
dc.subjectCADMIUM TELLURIDE-
dc.subjectCDTE-
dc.subjectSPECTRA-
dc.subjectCDZNTE-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectGAAS-
dc.subjectSEMICONDUCTORS-
dc.titleStudies on polycrystalline Cd0.96Zn0.04Te thin films prepared by vacuum evaporation-
dc.typeArticle-
dc.identifier.wosid000181956100006-
dc.identifier.scopusid2-s2.0-0037418709-
dc.type.rimsART-
dc.citation.volume70-
dc.citation.beginningpage511-
dc.citation.endingpage522-
dc.citation.publicationnameVACUUM-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorSridharan, M-
dc.contributor.nonIdAuthorNarayandass, SK-
dc.contributor.nonIdAuthorMangalaraj, D-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCd0.96Zn0.04Te films-
dc.subject.keywordAuthorXRD-
dc.subject.keywordAuthorphotoluminescence-
dc.subject.keywordAuthorB-10(+) implantation-
dc.subject.keywordAuthorRaman scattering-
dc.subject.keywordAuthoroptical properties-
dc.subject.keywordPlusION-IMPLANTATION DAMAGE-
dc.subject.keywordPlusRAMAN-SCATTERING-
dc.subject.keywordPlusOPTICAL-ABSORPTION-
dc.subject.keywordPlusCADMIUM TELLURIDE-
dc.subject.keywordPlusCDTE-
dc.subject.keywordPlusSPECTRA-
dc.subject.keywordPlusCDZNTE-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusSEMICONDUCTORS-
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