A Wideband CMOS Low Noise Amplifier Employing Noise and IM2 Distortion Cancellation for a Digital TV Tuner

DC FieldValueLanguage
dc.contributor.authorIm, Dong-Gu-
dc.contributor.authorNam, Il-Ku-
dc.contributor.authorKim, Hong-Teuk-
dc.contributor.authorLee, Kwy-Ro-
dc.date.available2009-11-30T09:07:08Z-
dc.date.created2012-02-06-
dc.date.issued2009-03-
dc.identifier.citationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.44, no., pp.686 - 698-
dc.identifier.issn0018-9200-
dc.identifier.urihttp://hdl.handle.net/10203/13721-
dc.description.abstractA wideband CMOS low noise amplifier (LNA) with single-ended input and output employing noise and IM2 distortion cancellation for a digital terrestrial and cable TV tuner is presented. By adopting a noise canceling structure combining a common source amplifier and a common gate amplifier by current amplification, the LNA obtains a low noise figure and high IIP3. IIP2 as well as IIP3 of the LNA is important in broadband systems, especially digital terrestrial and cable TV applications. Accordingly, in order to overcome the poor IIP2 performance of conventional LNAs with single-ended input and output and avoid the use of external and bulky passive transformers along with high sensitivity, an IM2 distortion cancellation technique exploiting the complementary RF performance of NMOS and PMOS while retaining thermal noise canceling is adopted in the LNA. The proposed LNA is implemented in a 0.18 mu m CMOS process and achieves a power gain of 14 dB, an average noise figure of 3 dB, an HP3 of 3 dBm, an HP2 of 44 dBm at maximum gain, and S11 of under -9 dB in a frequency range from 50 MHz to 880 MHz. The power consumption is 34.8 mW at 2.2 V and the chip area is 0.16 mm(2).-
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA Wideband CMOS Low Noise Amplifier Employing Noise and IM2 Distortion Cancellation for a Digital TV Tuner-
dc.typeArticle-
dc.identifier.wosid000263918900002-
dc.identifier.scopusid2-s2.0-61449225813-
dc.type.rimsART-
dc.citation.volume44-
dc.citation.beginningpage686-
dc.citation.endingpage698-
dc.citation.publicationnameIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.contributor.localauthorIm, Dong-Gu-
dc.contributor.localauthorLee, Kwy-Ro-
dc.contributor.nonIdAuthorNam, Il-Ku-
dc.contributor.nonIdAuthorKim, Hong-Teuk-
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