DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hyung-Cheol Shin | - |
dc.date.accessioned | 2013-03-16T03:10:37Z | - |
dc.date.available | 2013-03-16T03:10:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | 99 ISDRS, v., no., pp.73 - 75 | - |
dc.identifier.uri | http://hdl.handle.net/10203/126826 | - |
dc.language | ENG | - |
dc.title | Characteristics of P-channel Si Nano-crystal Memory with Tunneling Oxide | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 73 | - |
dc.citation.endingpage | 75 | - |
dc.citation.publicationname | 99 ISDRS | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Hyung-Cheol Shin | - |
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