Characteristics of P-channel Si Nano-crystal Memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-16T03:10:30Z | - |
| dc.date.available | 2013-03-16T03:10:30Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999 | - |
| dc.identifier.citation | IEEE Region 10 Ionference, TENCON, v., no., pp.1140 - 1142 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/126825 | - |
| dc.language | ENG | - |
| dc.title | Characteristics of P-channel Si Nano-crystal Memory | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1140 | - |
| dc.citation.endingpage | 1142 | - |
| dc.citation.publicationname | IEEE Region 10 Ionference, TENCON | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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