DSpace at KOASAS: Comparative study on radiation damage of a-Si : H P-I-N diodes made by PECVD and ion shower doping

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College of Engineering(공과대학)Dept. of Nuclear and Quantum Engineering(원자력및양자공학과)NE-Conference Papers(학술회의논문)

Comparative study on radiation damage of a-Si : H P-I-N diodes made by PECVD and ion shower doping

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Kim, H.J. / Cho, Gyuseong researcher / Lee, T.H. / Kim, Y.S.

Publisher: IEEE

Issue Date: 2001-11-04

Language: English

Citation: 2001 IEEE Nuclear Science Symposium Conference Record, pp.245 - 249

URI: http://hdl.handle.net/10203/126057

Appears in Collection: NE-Conference Papers(학술회의논문)

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Comparative study on radiation damage of a-Si : H P-I-N diodes made by PECVD and ion shower doping

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