A single transistor-level direct-conversion mixer for low-voltage low-power multi-band radios

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A CMOS direct-conversion mixer with a single transistor-level topology is proposed in this paper. Since the single transistor-level topology needs smaller supply voltage than the conventional Gilbert-cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system-on-a-chip (SoC). The proposed direct-conversion mixer is designed for the multi-band ultra-wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and -10 dBm, respectively, with multi-band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.
Publisher
ELECTRONICS TELECOMMUNICATIONS RESEARCH INST
Issue Date
2005-10
Language
English
Article Type
Article; Proceedings Paper
Citation

ETRI JOURNAL, v.27, pp.579 - 584

ISSN
1225-6463
URI
http://hdl.handle.net/10203/12587
Appears in Collection
EE-Journal Papers(저널논문)
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