A new low-loss microstrip structure on LTCC substrate

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We have devised and implemented a new low-loss microstrip transmission structure on LTCC substrate by including void cavities in the dielectric layer between conductor strip and ground plane. Measurements of lambda/4 T-resonators with the novel microstrip structure reveal total loss of 0.0126 dB/mm and Q-factor of 267 at 15.85GHz. The dielectric loss is analyzed as small as 0.0005 dB/mm at the frequency, and that is equivalent to an improvement of a factor of 18 compared to the conventional LTCC microstrip structure. The proposed microstrip structure with the embedded void cavities is suited for low loss LTCC based RF-MCM applications.
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Issue Date
2003-05
Language
English
Article Type
Article
Citation

IEICE TRANSACTIONS ON ELECTRONICS, v.E86C, no.5, pp.867 - 869

ISSN
0916-8524
URI
http://hdl.handle.net/10203/11746
Appears in Collection
EE-Journal Papers(저널논문)
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