0.1 μm p-channel MOSFETs with 51 GHz fT5 Ω

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dc.contributor.authorJeon, Duk Young-
dc.contributor.authorLee, KF-
dc.contributor.authorYan, RH-
dc.contributor.authorKim, YO-
dc.contributor.authorTennant, DM-
dc.contributor.authorWesterwick, EH-
dc.contributor.authorChin, GM-
dc.contributor.authorMorris, MD-
dc.contributor.authorJohnson, RW-
dc.contributor.authorLiu, TM-
dc.contributor.authorKistler, RC-
dc.contributor.authorVoshchenkov, AM-
dc.contributor.authorSwartz, RG-
dc.contributor.authorOurmazd, A-
dc.date.accessioned2013-03-14T22:52:23Z-
dc.date.available2013-03-14T22:52:23Z-
dc.date.created2012-02-06-
dc.date.issued1992-
dc.identifier.citationTechnical Digest of 1992 IEDM Meeting, v., no., pp.1012 - 1014-
dc.identifier.urihttp://hdl.handle.net/10203/114236-
dc.languageENG-
dc.title0.1 μm p-channel MOSFETs with 51 GHz fT5 Ω-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage1012-
dc.citation.endingpage1014-
dc.citation.publicationnameTechnical Digest of 1992 IEDM Meeting-
dc.contributor.localauthorJeon, Duk Young-
dc.contributor.nonIdAuthorLee, KF-
dc.contributor.nonIdAuthorYan, RH-
dc.contributor.nonIdAuthorKim, YO-
dc.contributor.nonIdAuthorTennant, DM-
dc.contributor.nonIdAuthorWesterwick, EH-
dc.contributor.nonIdAuthorChin, GM-
dc.contributor.nonIdAuthorMorris, MD-
dc.contributor.nonIdAuthorJohnson, RW-
dc.contributor.nonIdAuthorLiu, TM-
dc.contributor.nonIdAuthorKistler, RC-
dc.contributor.nonIdAuthorVoshchenkov, AM-
dc.contributor.nonIdAuthorSwartz, RG-
dc.contributor.nonIdAuthorOurmazd, A-
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MS-Conference Papers(학술회의논문)
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