Scanning tunneling microscopy study on c(4 x 4) structure of Si(100)
We have reexamined the formation and surface structure of Si(100)-c(4 x 4) obtained by hydrogen exposure using high resolution scanning tunneling microscopy (STM). The observed filled and empty state STM images are in good agreement with a recent carbon incorporated reconstruction model. We found all of Si dimers present in the c(4 x 4) unit cell are perpendicular to the underlying Si dimer row. The observation of long line missing dimer defects and SiC islands indicates that the c(4 x 4) structure observed in this work is also associated to carbon contamination. (C) 2001 Elsevier Science B.V. All rights reserved.
- Publisher
- ELSEVIER SCIENCE BV
- Issue Date
- 2001-06
- Language
- English
- Article Type
- Article; Proceedings Paper
- Keywords
SI(001); SURFACE; RECONSTRUCTION; CARBON
- Citation
SURFACE SCIENCE, v.482, pp.1445 - 1450
- ISSN
- 0039-6028
- Appears in Collection
- CH-Journal Papers(저널논문)
- Files in This Item
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