DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, KW | ko |
dc.contributor.author | Kim, NK | ko |
dc.contributor.author | Oh, SH | ko |
dc.contributor.author | Choi, ES | ko |
dc.contributor.author | Sun, HJ | ko |
dc.contributor.author | Yeom, SJ | ko |
dc.contributor.author | Lee, KN | ko |
dc.contributor.author | Lee, SS | ko |
dc.contributor.author | Hong, SK | ko |
dc.contributor.author | Choi, Si-Kyung | ko |
dc.contributor.author | Hong, TW | ko |
dc.contributor.author | Kim, IH | ko |
dc.contributor.author | Lee, JI | ko |
dc.contributor.author | Ur, SC | ko |
dc.contributor.author | Lee, YG | ko |
dc.contributor.author | Ryu, SL | ko |
dc.contributor.author | Kweon, SY | ko |
dc.date.accessioned | 2009-08-28T08:52:47Z | - |
dc.date.available | 2009-08-28T08:52:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005 | - |
dc.identifier.citation | ECO-MATERIALS PROCESSING DESIGN VI BOOK SERIES: MATERIALS SCIENCE FORUM, v.486-487, pp.285 - 288 | - |
dc.identifier.issn | 0255-5476 | - |
dc.identifier.uri | http://hdl.handle.net/10203/10857 | - |
dc.description.abstract | Ferroelectric properties of Pb-free (Bi,La)(4)Ti3O12 (BLT) films were optimized on a newly developed MTP cell structure. BLT films were coated on Pt/IrOx/Ir bottom electrode using sol-gel solutions. The composition of the optimized BLT film was about Ci(3.25)La(0.75)Ti(3.0)O(12), which was analyzed by ICP-MS method. The switchable polarization obtained in a 100mn-thick BLT film was about 20 uC/cm(2) at the 3 V applied voltage, and the optimized BLT film showed little fatigue loss about 10% up to 1 X 10(11) cycles. The imprint properties of the BLT film were also characterized at 25 degrees C and 90 degrees C operating temperature after 125 degrees C data storage. Regardless of operating temperature, switchable polarization of BLT had a sufficiently large margin for device operation up to 10 years. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | TRANS TECH PUBLICATIONS LTD | - |
dc.title | Ferroelectric properties of lead-free (Bi,La)(4)Ti3O12 thin film deposited on MTP cell structure for high density FeRAM device | - |
dc.type | Article | - |
dc.identifier.wosid | 000230389400072 | - |
dc.identifier.scopusid | 2-s2.0-35148839580 | - |
dc.type.rims | ART | - |
dc.citation.volume | 486-487 | - |
dc.citation.beginningpage | 285 | - |
dc.citation.endingpage | 288 | - |
dc.citation.publicationname | ECO-MATERIALS PROCESSING DESIGN VI BOOK SERIES: MATERIALS SCIENCE FORUM | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Si-Kyung | - |
dc.contributor.nonIdAuthor | Cho, KW | - |
dc.contributor.nonIdAuthor | Kim, NK | - |
dc.contributor.nonIdAuthor | Oh, SH | - |
dc.contributor.nonIdAuthor | Choi, ES | - |
dc.contributor.nonIdAuthor | Sun, HJ | - |
dc.contributor.nonIdAuthor | Yeom, SJ | - |
dc.contributor.nonIdAuthor | Lee, KN | - |
dc.contributor.nonIdAuthor | Lee, SS | - |
dc.contributor.nonIdAuthor | Hong, SK | - |
dc.contributor.nonIdAuthor | Hong, TW | - |
dc.contributor.nonIdAuthor | Kim, IH | - |
dc.contributor.nonIdAuthor | Lee, JI | - |
dc.contributor.nonIdAuthor | Ur, SC | - |
dc.contributor.nonIdAuthor | Lee, YG | - |
dc.contributor.nonIdAuthor | Ryu, SL | - |
dc.contributor.nonIdAuthor | Kweon, SY | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | (Bi,La)(4)Ti3O12 | - |
dc.subject.keywordAuthor | lead-free | - |
dc.subject.keywordAuthor | ferroelectric properties | - |
dc.subject.keywordAuthor | FeRAM | - |
dc.subject.keywordAuthor | MTP cell structure | - |
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