A New P-Channel MOSFET Structure with Schottky-Clamped Source and Drain
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Choong Ki | - |
| dc.date.accessioned | 2013-03-14T08:37:52Z | - |
| dc.date.available | 2013-03-14T08:37:52Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1984 | - |
| dc.identifier.citation | International Electron Devices Meeting, v., no., pp.609 - 612 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/107079 | - |
| dc.language | ENG | - |
| dc.title | A New P-Channel MOSFET Structure with Schottky-Clamped Source and Drain | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 609 | - |
| dc.citation.endingpage | 612 | - |
| dc.citation.publicationname | International Electron Devices Meeting | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Kim, Choong Ki | - |
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