Physical Observation of a Thermo-Morphic Transition in a Silicon Nanowire

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A thermo-morphic transition of a silicon nanowire (Si-NW) is investigated in vacuum and air ambients, and notable differences are found under each ambient. In the vacuum ambient, permanent electrical breakdown occurs as a result of the Joule self-heating arising from the applied voltage across both ends of the Si-NW. The resulting current abruptly declines from a maximum value at the breakdown voltage (V-BD) to zero. In addition, the thermal conductivity of the Si-NW is extracted from the V-BD values under the vacuum ambient and shows good agreement with previously reported results. While the breakdown of the Si-NW does not exhibit negative differential resistance under the vacuum ambient, it interestingly shows negative differential resistance with multiple resistances in the current-voltage characteristics under the air ambient, similar to the behavior of carbon nanotubes. This behavior is triggered by current-induced oxidation, which leads to the thermo-morphic transition observed by TEM analyses. Additionally, the current-induced oxidation is favorably applied to reduce the size of a Si-NW at a localized and designated point.
Publisher
AMER CHEMICAL SOC
Issue Date
2012-03
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; CARBON NANOTUBE; ROOM-TEMPERATURE; ELECTRICAL BREAKDOWN; DEVICES; PERFORMANCE; CONDUCTIVITY; CIRCUITS; MEMORY

Citation

ACS NANO, v.6, no.3, pp.2378 - 2384

ISSN
1936-0851
DOI
10.1021/nn2046295
URI
http://hdl.handle.net/10203/102956
Appears in Collection
EE-Journal Papers(저널논문)
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