First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2

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dc.contributor.authorOh, Young-Junko
dc.contributor.authorNoh, Hyeon-Kyunko
dc.contributor.authorChang, Kee-Jooko
dc.date.accessioned2013-03-12T15:31:05Z-
dc.date.available2013-03-12T15:31:05Z-
dc.date.created2012-08-21-
dc.date.created2012-08-21-
dc.date.issued2012-08-
dc.identifier.citationPHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992-
dc.identifier.issn0921-4526-
dc.identifier.urihttp://hdl.handle.net/10203/102734-
dc.description.abstractWe investigate the stability of boron dopants near the interface between crystalline Si and amorphous SiO2 through first-principles density functional calculations. An interstitial B is found to be more stable in amorphous SiO2 than in Si, so that B dopants tend to segregate to the interface. When defects exist in amorphous SiO2, the stability of B is greatly enhanced, especially around Si floating bond defects, while it is not significantly affected near Si-Si dimers, which are formed by O-vacancy defects. (C) 2011 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectAB-INITIO-
dc.subjectSILICON-
dc.subjectDIFFUSION-
dc.titleFirst-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2-
dc.typeArticle-
dc.identifier.wosid000305790800044-
dc.identifier.scopusid2-s2.0-84862002918-
dc.type.rimsART-
dc.citation.volume407-
dc.citation.issue15-
dc.citation.beginningpage2989-
dc.citation.endingpage2992-
dc.citation.publicationnamePHYSICA B-CONDENSED MATTER-
dc.identifier.doi10.1016/j.physb.2011.08.050-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChang, Kee-Joo-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorB dopants-
dc.subject.keywordAuthorB segregation-
dc.subject.keywordAuthorSi/SiO2 interface-
dc.subject.keywordAuthorDopant segregation-
dc.subject.keywordAuthorMetal-oxide-semiconductor field-effect-transistor-
dc.subject.keywordPlusAB-INITIO-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusDIFFUSION-
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