DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mun, Jeong-Hun | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2013-03-12T14:38:15Z | - |
dc.date.available | 2013-03-12T14:38:15Z | - |
dc.date.created | 2012-11-29 | - |
dc.date.created | 2012-11-29 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.101, no.14 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/102613 | - |
dc.description.abstract | We propose and analyze an approach to secure a high on/off current ratio in a graphene field effect transistor (FET) by introducing a physical gap along the channel rather than by attempting to open the energy bandgap of graphene. The device simulation results of the newly proposed device structure reveal highly suppressed off-state current of similar to 10(-9) A/mu m, an on/off current ratio of more than seven orders of magnitude, and a subthreshold slope of 2.23 mV/decade more than a 20-fold reduction relative to the theoretical limitation of conventional metal-oxide-semiconductor FETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756795] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | I-MOS | - |
dc.subject | DEVICE | - |
dc.subject | CIRCUIT | - |
dc.subject | STRAIN | - |
dc.title | Physical-gap-channel graphene field effect transistor with high on/off current ratio for digital logic applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000309603300077 | - |
dc.identifier.scopusid | 2-s2.0-84867527152 | - |
dc.type.rims | ART | - |
dc.citation.volume | 101 | - |
dc.citation.issue | 14 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4756795 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | I-MOS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | CIRCUIT | - |
dc.subject.keywordPlus | STRAIN | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.