Surface profiling and film thickness measurement play an important role for inspection in semi conductor industry. White light source had been used as scanning white light interferometry and spectrally resolved white light interferometry for determining surface and film thickness profile. These techniques however failed for thinner film. Recently, reflectometry and spectrally resolved white light interferometry was combined for the same. This technique used Fourier Transform for the calculation of phase in spectral domain with the use of Linnik interferometer. In this method a large amount of carrier offset (carrier fringes) is required to be effective. This carrier fringes in spectrally resolved white light interferometry was achieved by increasing the optical path difference between the test and the reference surface. But, Linnik interferometer cause defocusing problem to create these carrier fringes. We propose in this paper to combine reflectometry and spectrally resolved phase shifting interferometry for measurement of surface and film thickness profile with the use of Michelson objective. Michelson objective will be convenient to implement as compared to the Linnik type and the use of phase shifting interferometry does not necessarily need large number of fringes in the spectral domain.