Browse by Subject V-DEFECTS

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Effect of a tensile strained Al0.1Ga0.9N capping layer on the optical and structural properties in InGaN/GaN superlattices

Cho, HK; Lee, JeongYongresearcher; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.425 - 428, 2001-09

Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers

Cho, HK; Lee, KH; Kim, SW; Park, KS; Cho, Yong-Hoonresearcher; Lee, JH, JOURNAL OF CRYSTAL GROWTH, v.267, pp.67 - 73, 2004-06

Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYongresearcher; Kim, CS; Yang, GM; Sharma, N; Humphreys, C, JOURNAL OF CRYSTAL GROWTH, v.231, no.4, pp.466 - 473, 2001-11



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